Inorganic perovskite solar cells with high voltage and excellent stability against thermal and environmental degradation
Inorganic perovskite solar cells with high voltage and excellent stability against thermal and environmental degradation
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DOI：
10.1109/pvsc43889.2021.9518936
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发表时间：
2021-06
期刊：
影响因子：
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通讯作者：
Junhao Zhu;Ranjith Kottokkaran;Saba Sharikadze;Laila-Parvin Poly;V. Dalal
中科院分区：
文献类型：
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作者：
Junhao Zhu;Ranjith Kottokkaran;Saba Sharikadze;Laila-Parvin Poly;V. Dalal
我们报告的性能和稳定性的无机钙钛矿CsPbBr 3制造使用气相沉积。我们在这种材料中获得了有史以来最高的电压，超过1.6V。使用气相沉积工艺沉积该材料，然后在450 ℃下进行沉积后退火。采用逐层和顺序退火工艺来生长材料。在生长和退火之后，在300 ℃的温度下测试材料的热稳定性，并且X射线数据显示即使在这种高温下也没有材料的降解。n-i-p覆层器件在涂覆有TiO2或n-CdS的FTO衬底上制造。p层为P3HT或PTAA。这些器件显示出1.62V的开路电压，这是该材料中有史以来报道的最高电压。这些器械暴露于潮湿的室内空气中25天，其性能完全没有下降。详细的材料测量，如子带隙量子效率和深缺陷进行了测量。价带尾的Urbach能量被认为是22毫电子伏和中间的间隙缺陷密度在几个1015/cm 3的范围内。
We report on the properties and stability of inorganic perovskite CsPbBr3 fabricated using vapor deposition. We have obtained the highest voltage ever recorded, exceeding 1.6V, in this material. The material was deposited using vapor deposition process, followed by post-deposition anneal at 450 C. Both layer by layer, and sequential anneal processes were sued for growing the material. After growth and anneals, the material was tested for thermal stability at temperatures of 300 C, and the x-ray data showed that there was no degradation of the material even at this high temperature. n-i-p superstrate devices were fabricated on FTO substrates coated with either TiO2 or n-CdS. The p layer was P3HT or PTAA. The devices showed an open-circuit voltage of 1.62V, the highest ever reported in this material. The devices were exposed to humid room air for 25 days, and showed no degradation at all in its performance. Detailed material measurements such as subgap quantum efficiency and deep defects were measured. The Urbach energy for valence band tails is found to be 22 meV and mid-gap defect density in the range of few 1015/cm3.