Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green-to-Yellow Laser Diodes with sub-10 mA Threshold Current
Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green-to-Yellow Laser Diodes with sub-10 mA Threshold Current
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阈值电流低于 10 mA 的 BeZnCdSe 量子阱绿黄激光二极管的室温连续波操作
DOI：
10.1117/12.2211916
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Ryoichi Akimoto
中科院分区：
文献类型：
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作者：
Feng Jijun;Ryoichi Akimoto
低阈值电流 BeZnCdSe 单量子阱 (SQW) 激光二极管 (LD) 已经开发出来。波导采用脊形结构，刻蚀掉顶部p型BeMgZnSe/ZnSe:N短周期超晶格熔覆层，然后覆盖厚厚的SiO2层，并通过化学机械抛光和反应离子刻蚀工艺进行平坦化。开发了三种具有不同 SQW 厚度和 Cd 含量的 LD，并在不同的波导宽度和长度下进行了比较。在室温连续波条件下，利用涂有高反射率介电薄膜的解理波导面形成激光腔，分别实现了535、563和567 nm的激光波长。与我们之前开发的5μm宽、800μm长增益引导绿光激光器的增益引导二极管结构相比，阈值电流和电压分别为68mA和10.4V，具有7nm厚SQW的535nm绿光激光器可以在腔宽4μm、长度为1000nm的情况下实现阈值电流和电压分别为7.07mA和7.89V。 300微米。还开发了具有 4 nm 厚 SQW 的 563 nm 黄色 LD，其阈值电流和电压为 7.4 mA 和 8.48 V，适用于 3 μm 宽、300 μm 长的腔。对于 300 μm 的腔长和 7 μm 的宽度，具有 7 nm 厚的 SQW 的 567 nm 黄色 LD 可以分别实现 10.8 mA 和 8.4 V 的阈值电流和电压。由于空腔中载流子的加强限制，阈值电流和电压降低。设备性能可以显着提高，功耗也大大降低。与InGaN/GaN绿色LD相比，其阈值电流和功耗也足够低，这将有利于ZnSe基LD作为全彩显示以及一些生物医学设备中的光源的潜在应用。
Low threshold current BeZnCdSe single quantum-well (SQW) laser diodes (LDs) have been developed. The waveguide was formed of a ridge structure with etching away the top p-type BeMgZnSe/ZnSe:N short-period superlattice cladding layer, and then covered with a thick SiO2layer and planarized with chemical-mechanical polishing and reactive ion etching process. Three type LDs with different SQW thickness and Cd content were developed and compared at varying waveguide width and length. Lasing wavelength of 535, 563, and 567 nm were realized respectively, at room-temperature continuous-wave condition with the laser cavity formed by the cleaved waveguide facets coated with high-reflectivity dielectric films. Compared with our previously developed gain-guided diode structure for a 5-μm-wide, 800- μm-long gain-guided green laser with a threshold current and voltage of 68 mA and 10.4 V, a 535-nm green laser with 7- nm-thick SQW can realize a threshold current and voltage of 7.07 mA and 7.89 V, respectively, for a cavity width of 4 μm and length of 300 μm. A 563-nm yellow LD with 4-nm-thick SQW was also developed with 7.4-mA and 8.48-V threshold current and voltage for a 3-μm-wide, 300-μm-long cavity. A 567-nm yellow LD with 7-nm-thick SQW can achieve a threshold current and voltage of 10.8 mA and 8.4 V, respectively, for a cavity length of 300 μm and width of 7 μm. The threshold current and voltage were decreased due to the reinforced confinement of carriers in cavities. The device performance can be significantly improved with much lower power consumption. The threshold current and power consumption is also sufficiently low compared with that of InGaN/GaN green LDs, which will benefit the potential application for ZnSe-based LDs as light sources in full-color display as well as some biomedical devices.