A quantitative investigation of electron detrapping in SiO2 under Fowler–Nordheim stress
A quantitative investigation of electron detrapping in SiO2 under Fowler–Nordheim stress
复制标题
Fowler-Nordheim 应力下 SiO2 中电子去俘获的定量研究
DOI：
10.1063/1.350452
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发表时间：
1992
影响因子：
3.2
通讯作者：
W. Eccleston
中科院分区：
文献类型：
--
作者：
J. Zhang;Stephen Taylor;W. Eccleston
利用Al/SiO2/Si电容器结构，定量研究了在Fowler-Nordheim （FN）应力作用下，SiO2中被困电子从类受体俘获位点脱出的过程。在FN应力之前，使用雪崩电子注入技术对陷阱进行充电，以增强后续的脱陷，并有助于将其与后续研究中的捕获区分开来。从阴极附近电场强度的变化来评估被脱去的电子的数量。在电场大于等于8 MV/cm的FN应力下，捕获的电子被捕获的概率小于20%。该概率对最初困在氧化物中的电子数量不敏感，随着应力场强度的增加而降低。在本研究的实验范围内，动态平衡模型不能很好地描述电子脱陷的瞬态行为，因此建立了一个基于氧化反应的新模型。
Detrapping of the trapped electrons from the acceptorlike trapping sites in SiO2 under Fowler–Nordheim (FN) stress has been quantitatively investigated using Al/SiO2/Si capacitor structures. Before FN stress, the traps were charged using the avalanche electron injection technique to enhance subsequent detrapping, and facilitate its distinction from trapping in subsequent studies. The quantity of electrons detrapped was assessed from the shift in the electrical field strength near the cathode. Under FN stress with an electrical field of 8 MV/cm or over, the probability of captured electrons remaining trapped was found to be less than 20%. This probability was insensitive to the number of electrons initially trapped in the oxide, decreasing as the stressing field strength increases. Within the experimental range of this study, the transient behavior of electron detrapping cannot be satisfactorily described by the dynamic balance model and a new model is developed based on the reactions occurring in the oxid...