Spin relaxation in GaAs(110) quantum wells
Spin relaxation in GaAs(110) quantum wells
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DOI：
10.1103/physrevlett.83.4196
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发表时间：
1999-11-15
影响因子：
8.6
通讯作者：
Ohno, H
中科院分区：
文献类型：
--
作者：
Ohno, Y;Terauchi, R;Ohno, H
研究了GaAs/AlGaAs（110）量子威尔斯阱（QW）中电子自旋弛豫时间τ（s），发现传统（100）量子阱的主要自旋散射机制[D 'yakonov-Perel'（DP）机制]被抑制，室温下（110）量子阱的τ（s）为纳秒量级，比（100）量子阱的τ（s）长一个数量级.通过研究量子化能量、电子迁移率和τ（s）的温度依赖性来检查负责自旋弛豫的机制。结果表明，在没有DP相互作用的情况下，电子-空穴交换相互作用在很宽的温度范围内（类似于0-300 K）限制τ（s）。
We investigated electron spin relaxation time tau(s) in GaAs/AlGaAs (110) quantum wells (QWs), in which a predominant spin scattering mechanism [D'yakonov-Perel' (DP) mechanism] for conventional (100) QWs is substantially suppressed; tau(s) in (110) QWs was of nanosecond order at room temperature, more than an order of magnitude longer than that: of the (100) counterpart. The mechanism responsible for the spin relaxation was examined by studying the quantized energy, electron mobility, and temperature dependences of tau(s). The results suggest that in the absence of DP interaction, electron-hole exchange interaction limits tau(s) in a wide temperature range (similar to 0-300 K).