Analytical electron microscopic studies and positron lifetime measurements in Al‐doped MgO crystals
Analytical electron microscopic studies and positron lifetime measurements in Al‐doped MgO crystals
复制标题
Al 掺杂 MgO 晶体的分析电子显微镜研究和正电子寿命测量
DOI：
10.1063/1.339816
复制
发表时间：
1987
影响因子：
3.2
通讯作者：
M. Abraham
中科院分区：
文献类型：
--
作者：
M. Pedrosa;R. Pareja;R. González;M. Abraham
通过分析电子显微镜检查和正电子寿命测量对有意掺杂Al的MgO晶体进行了表征。在高Al含量的样品中观察到大的尖晶石（MgO-Al 2 O3）沉淀，发现沉淀物与基体之间有明确的晶体学关系，正电子寿命谱的特征似乎取决于MgO晶格中不同杂质的价态，表明正电子被空位杂质复合物捕获。
MgO crystals intentionally doped with Al were characterized by analytical electron microscopic examinations and positron lifetime measurements. Large spinel (MgO Al2O3) precipitates were observed in samples with high contents of Al. A well‐defined crystallographic relationship between the precipitates and the matrix was found. The characteristics of positron lifetime spectra appear to depend on the valence state of the different impurities in the MgO lattice suggesting that positrons are trapped by vacancy impurity complexes.