High performance 940nm VCSELs on large area germanium substrates: the ideal substrate for volume manufacture
High performance 940nm VCSELs on large area germanium substrates: the ideal substrate for volume manufacture
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大面积锗基板上的高性能 940nm VCSEL：批量生产的理想基板
DOI：
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
Sung Wook Lim
中科院分区：
文献类型：
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作者：
Andrew J. Johnson;A. Joel;A. Clark;D. Pearce;M. Geen;Wang Wang;R. Pelzel;Sung Wook Lim
采用150 mm Ge衬底取代传统的GaAs衬底，消除了高性能940 nm VCSEL外延片中的晶圆弯曲/翘曲。对于这一应用，Ge是GaAs的替代产品，它还有其他优点，因为它是零EPD，机械更坚固。在Ge衬底上制备了高性能的940 nm VCSEL，并与同结构的GaAsVCSEL进行了直接比较，两种方法在器件性能上没有明显的差别。GE的使用还提供了一条直接生长200 mm VCSEL的途径，因为在该直径处很容易获得GE。
Wafer bow/warp in high performance 940nm VCSEL epitaxial wafers has been eliminated through the use of 150 mm Ge substrates, replacing conventional GaAs substrates. Ge is a drop-in replacement for GaAs for this application and has additional benefits in that it is zero EPD and mechanically more robust. High performance 940nm VCSELs have been fabricated on Ge and compared directly with those grown on GaAs with the same structure, with no discernible difference in device performance between the two approaches. Use of Ge also provides an immediate route to 200 mm VCSEL growths as Ge is readily available at that diameter.