A 10–67-GHz CMOS step attenuator with improved flatness and large attenuation range

A 10–67-GHz CMOS step attenuator with improved flatness and large attenuation range
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DOI:
10.1109/sirf.2013.6489438
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发表时间:
2013-03
期刊:
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
影响因子:
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通讯作者:
J. Bae;Jaeyoung Lee;C. Nguyen
J. Bae;Jaeyoung Lee;C. Nguyen
中科院分区:
其他
文献类型:
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作者:
J. Bae;Jaeyoung Lee;C. Nguyen

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采用新的设计方法设计了四位 CMOS 步进衰减器,以实现改善的平坦度和 10-67 GHz 的大衰减范围。该设计方法基于传统 Pi 型、T 型和分布式衰减器的频率响应特性。在 10-67 GHz 范围内,测量结果显示衰减平坦度为 6.8 dB,衰减范围为 32-42 dB。
A four-bit CMOS step attenuator is designed using a new design method to achieve improved flatness and large attenuation range from 10-67 GHz. The design method is based on the frequency-response characteristics of the conventional Pi-, T-, and distributed attenuators. Over 10-67 GHz, the measured results exhibit attenuation flatness of 6.8 dB and attenuation range of 32-42 dB.