High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure
High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure
复制标题
具有倒置器件结构的高色纯度ZnSe/ZnS核/壳量子点蓝光发光二极管
DOI：
10.1063/1.4817086
复制
发表时间：
2013-07-29
影响因子：
4
通讯作者：
Jen, Alex K. -Y.
中科院分区：
文献类型：
--
作者：
Ji, Wenyu;Jing, Pengtao;Jen, Alex K. -Y.
使用无毒 ZnSe/ZnS 核/壳量子点 (QD) 作为发射器的倒置发光器件展示了深蓝色、高色纯度电致发光 (EL)。该器件具有中等开启电压 (4.0V) 和色彩饱和的深蓝色发射，半峰全宽窄于 15 nm，发射峰值为 441 nm。它们的最大亮度和电流效率分别达到1170 cd/m(2) 和0.51 cd/A。由于电子有效注入 ZnSe/ZnS 量子点，因此通过基于 ZnO 纳米颗粒的电子传输层实现了高性能。通过时间分辨光致发光光谱研究 ZnSe/ZnS 量子点和空穴传输材料之间的能量转移过程，以了解器件的 EL 机制。这些结果为高效深蓝色量子点发光二极管的制造以及基于量子点的照明光源和全彩面板显示器的实现提供了新的指导。 (C) 2013 AIP 出版有限责任公司。
Deep-blue, high color purity electroluminescence (EL) is demonstrated in an inverted light-emitting device using nontoxic ZnSe/ZnS core/shell quantum dots (QDs) as the emitter. The device exhibits moderate turn-on voltage (4.0V) and color-saturated deep blue emission with a narrow full width at half maximum of similar to 15nm and emission peak at 441 nm. Their maximum luminance and current efficiency reach 1170 cd/m(2) and 0.51 cd/A, respectively. The high performances are achieved through a ZnO nanoparticle based electron-transporting layer due to efficient electron injection into the ZnSe/ZnS QDs. Energy transfer processes between the ZnSe/ZnS QDs and hole-transporting materials are studied by time-resolved photoluminescence spectroscopy to understand the EL mechanism of the devices. These results provide a new guide for the fabrication of efficient deep-blue quantum dot light-emitting diodes and the realization of QD-based lighting sources and full-color panel displays. (C) 2013 AIP Publishing LLC.