Multi-Feed Antenna and Electronics Co-Design: An E-Band Antenna-LNA Front End With On-Antenna Noise-Canceling and Gm-Boosting
Multi-Feed Antenna and Electronics Co-Design: An E-Band Antenna-LNA Front End With On-Antenna Noise-Canceling and Gm-Boosting
复制标题
DOI：
10.1109/jssc.2020.3024592
复制
发表时间：
2020-12-01
影响因子：
5.4
通讯作者：
Wang, Hua
中科院分区：
文献类型：
--
作者：
Li, Sensen;Chi, Taiyun;Wang, Hua
本文提出了一种与片上多馈源天线协同设计并集成的e波段低噪声放大器（LNA），用于天线级LNA降噪和增强。与将天线视为简单的50 ω辐射负载的传统方法不同，我们利用天线作为具有直接天线上信号调理和处理能力的多馈源无源辐射网络。这种天线电子协同设计概念可以潜在地提高无线前端性能，超越仅限电子设计，并为大量前端创新打开大门。我们还提出了等效电路来模拟多馈源天线系统并阐明天线上信号处理操作。作为概念验证，我们提出了一种天线-LNA共同设计的架构，并探索了共门（CG） LNA路径、共源（CS） LNA路径和一对近场耦合折叠槽天线之间的相互作用，用于天线上噪声消除和gm增强。在测量中，引入了真y因子辐射法作为测量片上多馈源天线和LNA/RX集成噪声系数（NF）的新方法。然后，我们进行了传统的基于灵敏度的NF测量。在高毫米波（mm-Wave）下，两种测量都显示出准确和一致的NF特性。e波段天线- lna前端采用Globalfoundries 45nm CMOS SOI工艺实现，具有4.8 db NF和2.2 dbm IIP3，在相似频率下实现了最佳FoM。此外，还演示了空中调制测试，在E波段无线链路上支持> 10gb /s高保真高阶QAM信号。
This article presents an E-band low-noise amplifier (LNA) co-designed and co-integrated with an on-chip multifeed antenna for antenna-level LNA noise-canceling and gm -boosting. Different from conventional approaches that view antennas as a simple 50-Omega radiation load, we exploit antennas as multi-feed passive radiating networks with direct onantenna signal conditioning and processing capabilities. Such an antenna-electronics co-design concept can potentially advance wireless front-end performance beyond electronics-only designs and opens the door to a plethora of front-end innovations. We also propose equivalent circuits to model multi-feed antenna systems and elucidate on-antenna signal processing operations. As a proof of concept, we propose an antenna-LNA co-designed architecture and explore the interactions among a common-gate (CG) LNA path, a common-source (CS) LNA path, and a pair of near-field coupled folded slot antennas for on-antenna noise-cancellation and gm-boosting. In the measurements, a true Y-factor radiation method is introduced as a new approach to measure the noise figure (NF) of the on-chip multi-feed antenna and LNA/RX integration. Then, we perform the conventional sensitivity-based NF measurement. Both measurements show accurate and consistent NF characterization at high millimeter-wave (mm-Wave). The E-band antenna-LNA front end is implemented in the Globalfoundries 45-nm CMOS SOI process and demonstrates 4.8-dB NF with 2.2-dBm IIP3, achieving the best reported FoM at similar frequencies. Furthermore, over-the-air modulation tests are demonstrated, supporting >10-Gb/s high-fidelity high-order QAM signals over an E- band wireless link.