Fully Packaged Self-Powered Triboelectric Pressure Sensor Using Hemispheres-Array
Fully Packaged Self-Powered Triboelectric Pressure Sensor Using Hemispheres-Array
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DOI：
10.1002/aenm.201502566
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发表时间：
2016-06-08
影响因子：
27.8
通讯作者：
Wang, Zhong Lin
中科院分区：
文献类型：
--
作者：
Lee, Keun Young;Yoon, Hong-Joon;Wang, Zhong Lin
在这里，我们展示了一种新设计的基于半球阵列结构的全封装Teng，其结构牢固地构建在封闭式封装系统中，没有任何隔板。半球阵结构张力筋(H-TENG)具有高的机械耐久性、良好的稳健性和高的弹性性能。制备了不同直径的H-TENG，并测试了其在不同垂直压力下的输出性能。基于弹性半球体阵列结构的H-TENG主要由五层组成：一层聚二甲基硅氧烷(PDMS)半球形阵列结构，顶层为铜(Cu2+)的聚二甲基硅氧烷(PDMS)半球形阵列结构；一层摩擦电极性与铜相反的聚四氟乙烯(PTFE)膜，其摩擦电极性与铜相反，然后沉积一层铜层作为上电极；整个结构被夹在两个丙烯酸基材之间，如图1a所示。该装置既可以与刚性材料包装，也可以与PDMS等弹性材料包装，使其在拉伸和弯曲运动引起的各种机械应变下具有广泛的适用性能。支持信息中的图S2显示，带有弹性PDMS的包装H-Teng既可以伸缩又可以灵活。图1b显示了H-Teng的相应照片。半球阵列结构薄膜是通过复制工艺制备的(有关制造细节，请参阅实验部分和辅助信息中的图S1)。[25-31]场发射扫描电子显微镜进一步表征了半球形阵列结构薄膜的形貌，如图1c所示。可以看出，半球形阵列结构的薄膜已经均匀形成。支持信息中的图S3显示了不同直径为90、600μm和3 mm的半球阵列结构薄膜的相应形貌。制造的H-Teng的工作机制在支持信息中的图2a和图S4中被示意性地呈现。在初始状态下，铜沉积半球形阵列结构薄膜的顶部区域与聚四氟乙烯薄膜形成了一个接触点，在那里没有电荷转移，因此没有电势。当对H-Teng施加压力时，铜沉积的半球形阵列结构的薄膜开始变形，相应地与PTFE薄膜形成了尺寸平坦的接触区。半球形阵列结构薄膜与聚四氟乙烯薄膜之间的接触面积取决于所施加的压力。正摩擦电性
Here, we demonstrate a newly designed fully packaged TENG based on hemispheres-array-structure, whose structure is firmly built in enclosed and packaged system without any spacer. The hemispheres-array-structured TENGs (H-TENGs) exhibit high mechanical durability, excellent robustness behavior, and high elastic property. Different diameters of H-TENGs were fabricated and their output performances were measured under various vertical compressive forces. We demonstrated that fabricated H-TENG can be utilized as an active self-powered sensor array to map the distribution of foot produced pressure, which is designed to enhance humanelectronics interaction.A schematic illustration of the H-TENGs based on elastic hemispheres-array-structured film is shown in Figure 1. The H-TENG mainly consists of five layers: a layer of polydimethylsiloxane (PDMS) hemispheres-array-structure with copper (Cu)-deposited on top, which acts as the elastic triboelectric material and the bottom electrode; a PTFE (polytetrafluoroethylene) film that has an opposite triboelectric polarity than Cu followed by the deposition of an Cu layer electrode as the top electrode; the entire structure is sandwiched between two acrylic substrates as shown in Figure 1a. The device can be packaged with not only rigid one, but also elastic materials such as PDMS, which results in a wide range of applicable properties under various mechanical strains induced by tensile and bending motions. Figure S2 in the Supporting Information shows that packaged H-TENG with elastic PDMS is able to be both stretchable and flexible. Figure 1b displays a corresponding photograph of the H-TENG. The hemispheres-array-structured film was fabricated by replication process (See the Experimental Section and Figure S1 in the Supporting Information for fabrication details).[25–31] The morphologies of hemispheres-array-structured film were further characterized by field emission-scanning electron microscopy as shown in Figure 1c. It can be seen that the hemispheres-arraystructured film has been uniformly formed. The corresponding morphologies of the hemispheres-array-structured film fabricated with different diameters of 90, 600 μm, and 3 mm are shown in Figure S3 in the Supporting Information. The working mechanism of the fabricated H-TENG is schematically presented in Figure 2a and Figure S4 in the Supporting Information. At the initial state, the top area of Cudeposited hemispheres-array-structured film created a point of contact with PTFE film, where there is no charge transfer, which results in no electric potential. When a compressive force is applied to the H-TENG, the Cu-deposited hemispheres-arraystructured film starts to be deformed and dimensional flat contact area is created with PTFE film accordingly. The contact area between the hemispheres-array-structured film and PTFE film depends on the applied compressive force. Positive triboelectric