Cold delay defect screening
Cold delay defect screening
复制标题
冷延迟缺陷筛查
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
David M. Wu
中科院分区：
文献类型：
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作者：
Chao;E. McCluskey;Xi‐Bin Shao;David M. Wu
延迟缺陷可以在正常的生产测试流程中逃避检测；特别是如果它们不影响测试流中包含的任何长路径。一些延迟缺陷可以增加它们的延迟，使它们更容易检测，通过使用非常低的电源电压（VLV测试）进行测试。然而，对于高电阻互连引起的延迟缺陷，VLV测试并不有效。本文介绍了这种缺陷的筛选技术。这种技术，即冷试验，依赖于在低温下进行试验。分析了一种特殊类型的缺陷，硅化开放，并给出了实验数据，以证明冷测试的有效性。
Delay defects can escape detection during the normal production test flow; particularly if they do not affect any of the long paths included in the test flow. Some delay defects can have their delay increased, making them easier to detect, by carrying out the test with a very low supply voltage (VLV testing). However, VLV testing is not effective for delay defects caused by high resistance interconnects. This paper presents a screening technique for such defects. This technique, cold testing, relies on carrying out the test at low temperature. One particular type of defect, silicide open, is analyzed and experimental data are presented to demonstrate the effectiveness of cold testing.