Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions
Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions
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DOI：
10.1063/1.1707228
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发表时间：
2004-04-19
影响因子：
4
通讯作者：
Valet, T
中科院分区：
文献类型：
--
作者：
Huai, YM;Albert, F;Valet, T
本文研究了磁性隧道结（PtMn/CoFe/Ru/CoFe/Al_2 O_3/CoFe/NiFe）的自旋转移效应，其尺寸为0.1 × 0.2 μ m（2），电阻面积积RA为0.5-10 Ω μ m（2）（Δ R/R=1%-20%）。在临界电流密度约为8x 10（6）A/cm（2）时观察到电流诱导磁化翻转。开关的自旋转移效应的属性是支持由电流引起的Δ R/R值相同的R与H测量获得的。此外，临界开关电流密度有明显的依赖于所施加的磁场，与先前已经观察到的情况下，在金属多层系统中的自旋转移诱导开关一致。(C)2004年，美国物理学会。
The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 mum(2) and resistance-area product RA in the range of 0.5-10 Omega mum(2) (DeltaR/R=1%-20%). Current-induced magnetization switching is observed with a critical current density of about 8x10(6) A/cm(2). The attribution of the switching to the spin-transfer effect is supported by a current-induced DeltaR/R value identical to the one obtained from the R versus H measurements. Furthermore, the critical switching current density has clear dependence on the applied magnetic field, consistent with what has been observed previously in the case of spin-transfer-induced switching in metallic multilayer systems. (C) 2004 American Institute of Physics.