Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth
Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth
复制标题
通过浅离子注入和随后的金刚石过度生长在金刚石中生成锡空位中心
DOI：
10.1021/acs.nanolett.9b04495
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发表时间：
2020
期刊：
影响因子：
10.8
通讯作者：
Vučković, Jelena
中科院分区：
文献类型：
--
作者：
Rugar, Alison E.;Lu, Haiyu;Dory, Constantin;Sun, Shuo;McQuade, Patrick J.;Shen, Zhi-Xun;Melosh, Nicholas A.;Vučković, Jelena
钻石中的第四族色心因其作为光学活性固态自旋量子比特的潜力而引起了人们的极大兴趣。这种发射器的未来应用需要开发与高质量纳米光子器件兼容的精确的现场控制发射器产生技术。这项任务对于具有大的IV族杂质原子的色心来说更具挑战性，否则它们很有希望，因为它们预测的长自旋相干时间没有稀释冰箱。例如，当应用于带负电荷的锡空位(SNV-)中心时，传统的位置控制色心产生方法要么破坏钻石表面，要么产生无法解释的特征的体光谱。在这里，我们展示了一种新的方法来产生具有干净的体光谱的位置控制的SNV中心。我们通过一个薄的注入掩膜浅注入锡离子，然后通过化学气相沉积生长一层金刚石。这种方法可以推广到其他色心，并与量子纳米光子器件的制作相结合。
Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV–) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV–centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.