REDUCED SILICON DONOR INCORPORATION IN MBE GROWN GAAS-LAYERS USING CRACKER-GENERATED DIMER ARSENIC
REDUCED SILICON DONOR INCORPORATION IN MBE GROWN GAAS-LAYERS USING CRACKER-GENERATED DIMER ARSENIC
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DOI：
10.1016/0022-0248(91)90980-j
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发表时间：
1991-05-01
影响因子：
1.8
通讯作者：
MURRAY, JJ
中科院分区：
文献类型：
--
作者：
WU, BJ;MII, YJ;MURRAY, JJ
当使用二聚砷时，GaAs层中的Si掺杂剂掺入被证明是减少的。 用极化子掺杂谱和二次离子质谱研究了在不同砷裂解条件下用分子束外延生长的掺硅GaAs层。 在整个掺杂范围的调查，5 × 10（16）至2 × 10（18）cm-3，强烈减少硅掺入观察到的二聚体砷的分数增加。 随着生长温度的升高，Si掺入的减少增强。 有证据表明，而不是硅自补偿，硅掺杂剂实际上是解吸二聚体砷的存在下。 由于撞击的二聚体砷物质与衬底表面处的Si掺杂剂之间的反应而形成挥发性Si（x）As（y）化合物可能是造成这种现象的原因。 估算了该反应的活化能。
Si dopant incorporation in GaAs layers is shown to be reduced when dimer arsenic is used. Si doped GaAs layers grown by molecular beam epitaxy under different arsenic cracker conditions are studied by a Polaron doping profiles and secondary ion mass spectrometry. Throughout the doping range of investigation, 5 x 10(16) to 2 x 10(18) cm-3, strong reduction in Si incorporation is observed as the fraction of dimer arsenic is increased. The reduction of Si incorporation is enhanced as the growth temperature is increased. Evidence is given to show that, instead of Si self-compensation, Si dopants are actually desorbed in the presence of dimer arsenic. The formation of volatile Si(x)As(y) compound(s) due to the reaction between the impinging dimer arsenic species and the Si dopants at the substrate surface may be responsible for this phenomenon. The activation energy of this reaction is estimated.