Degradation of the piezoelectric response of sputtered c-axis AlN thin films with traces of non-(0002) x-ray diffraction peaks
Degradation of the piezoelectric response of sputtered c-axis AlN thin films with traces of non-(0002) x-ray diffraction peaks
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DOI：
10.1063/1.2191425
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发表时间：
2006-04-17
影响因子：
4
通讯作者：
Sangrador, J
中科院分区：
文献类型：
--
作者：
Sanz-Hervás, A;Clement, M;Sangrador, J
我们观察到溅射AlN薄膜的明显反常行为，尽管具有（0002）择优取向和半峰宽小于2 °的窄摇摆曲线，但却表现出很差的压电响应;但是，在此情况下，具有弱的0002 X射线衍射峰和宽至8度的摇摆曲线的其它AlN膜提供了良好的压电系数d（31）值（2.1 pm/V）。这两种类型的薄膜之间的关键区别是在前者的X射线衍射图案中存在非（0002）反射的痕迹。非（0002）反射可能与显著降低净压电场的缺陷（可能是反转域）有关。(c)2006年，美国物理学会。
We have observed the apparently anomalous behavior of sputtered AlN thin films that exhibit poor piezoelectric response in spite of having (0002) preferred orientation and narrow rocking curve with full width at half maximum below 2 degrees; however, other AlN films with weak 0002 x-ray diffraction peak and rocking curve as wide as 8 degrees provide a good value of the piezoelectric coefficient d(31) (2.1 pm/V). The critical difference between both types of films is the presence of traces of non-(0002) reflections in the x-ray diffraction patterns of the former. Non-(0002) reflections may be related to defects (probably, inversion domains) that significantly reduce the net piezoelectric field. (c) 2006 American Institute of Physics.