Open tube diffusion of Zn into AlGaAs and GaAs
Open tube diffusion of Zn into AlGaAs and GaAs
复制标题
Zn 开管扩散到 AlGaAs 和 GaAs 中
DOI：
--
复制
发表时间：
1983
期刊：
影响因子：
--
通讯作者：
J. Merz
中科院分区：
文献类型：
--
作者：
Y.;K. Eda;G. A. Vawter;J. Merz
本文提出了一种利用密闭腔将锌扩散到AlGaAs和GaAs中的新方法。对比了700℃下Zn向GaAs和AlxGa1−xAs（0.1≤x≤0.5）扩散的深度和质量。可以看出，新工艺提供了一个很好的控制扩散深度，并允许浅扩散。用范德保法测量了比电阻率和表面载流子浓度。溶剂金属的选择影响扩散质量。讨论了溶剂金属的一些变化。该技术用于改进单片集成光学器件中的欧姆接触。
A new method of open tube zinc diffusion into AlGaAs and GaAs using a confined chamber has been developed. The depth and quality of Zn diffusion into GaAs and AlxGa1−xAs (0.1≤x≤0.5) at 700 °C, are compared with the traditional closed tube diffusion process. It is seen that the new process provides for a very well controlled diffusion depth and allows shallow diffusion. The specific resistivity and surface carrier concentration are measured by the Van der Pauw method. The diffusion quality is affected by the choice of solvent metals. Some variations of solvent metals are discussed. This technique is used for improvement of ohmic contacts in monolithic integrated‐optical devices.