Γ 1 conduction electron g factor and matrix elements in GaAs and Al x Ga 1 − x As alloys
Γ 1 conduction electron g factor and matrix elements in GaAs and Al x Ga 1 − x As alloys
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DOI：
10.1103/physrevb.13.4466
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发表时间：
1976-05
影响因子：
3.7
通讯作者：
D. Chadi;A. Clark;R. Burnham
中科院分区：
文献类型：
--
作者：
D. Chadi;A. Clark;R. Burnham
我们报告了一种使用光学自旋定向技术（发光偏振、汉勒效应和寿命测量）确定 ${\ensuremath{\Gamma}}_{1}$ 传导电子的 $|{g}^{*}|$ 的新技术。 $|{g}^{*}|$ 与 $x$ 在 ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}(0\ensuremath{\le}x\ensuremath{\le}0.21)$ 中的变化意味着 GaAs 中的 ${g}^{*}$ 为负，这与之前的理论解释相反，但与最近的各种研究一致测量。 GaAs 中 ${g}^{*}$ 和 ${m}^{*}$ 的实验值用于确定连接 ${\ensuremath{\Gamma}}_{1}$ 态与 ${\ensuremath{\Gamma}}_{15}$ 价态和传导态的动量矩阵元素。 GaAs 获得的结果用于计算 ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ 合金和许多闪锌矿晶体中的基体元素和 $g$ 因子。几乎在所有情况下，${g}^{*}$ 的计算值和测量值之间的一致性都得到了改善。
We report a new technique for determining $|{g}^{*}|$ of ${\ensuremath{\Gamma}}_{1}$ conduction electrons using optical-spin orientation techniques (polarization of luminescence, Hanle effect, and lifetime measurements). The variation of $|{g}^{*}|$ with $x$ in ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}(0\ensuremath{\le}x\ensuremath{\le}0.21)$ implies a negative ${g}^{*}$ in GaAs, in contrast to previous theoretical interpretations but in agreement with various recent measurements. The experimental values of ${g}^{*}$ and ${m}^{*}$ in GaAs are used to determine the momentum matrix elements connecting the ${\ensuremath{\Gamma}}_{1}$ state to the ${\ensuremath{\Gamma}}_{15}$ valence and conduction states. The results obtained for GaAs are employed to calculate matrix elements and $g$ factors in ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ alloys and in a number of zinc-blende crystals. Improved agreement between the calculated and measured values of ${g}^{*}$ is obtained in nearly all cases.