High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation
复制标题
DOI：
10.1109/led.2003.821673
复制
发表时间：
2004-02
影响因子：
4.9
通讯作者：
Likun Shen;R. Coffie;D. Buttari;S. Heikman;A. Chakraborty;A. Chini;Sarah L. Keller;S. Denbaars;Umesh K. Mishra
中科院分区：
文献类型：
--
作者：
Likun Shen;R. Coffie;D. Buttari;S. Heikman;A. Chakraborty;A. Chini;Sarah L. Keller;S. Denbaars;Umesh K. Mishra
本文介绍了一种大功率GaN/AlGaN/GaN高电子迁移率晶体管（HEMT）。厚盖层已被用来屏蔽表面状态和减少分散。使用深栅极凹槽来实现所需的介电常数。为了减小栅漏电流和提高击穿电压，在栅凹槽的漏侧淀积了一层薄的SiO2/sub 2/ layer。没有使用表面钝化层。实现了90 V的击穿电压。在10 GHz下测得的输出功率密度为12 W/mm，相关功率附加效率（PAE）为40.5%。这些结果表明，作为一个可控的和可重复的解决方案，以减少分散和生产的GaN基HEMT功率无表面钝化的技术的潜力。
In this paper, a high-power GaN/AlGaN/GaN high electron mobility transistor (HEMT) has been demonstrated. A thick cap layer has been used to screen surface states and reduce dispersion. A deep gate recess was used to achieve the desired transconductance. A thin SiO/sub 2/ layer was deposited on the drain side of the gate recess in order to reduce gate leakage current and improve breakdown voltage. No surface passivation layer was used. A breakdown voltage of 90 V was achieved. A record output power density of 12 W/mm with an associated power-added efficiency (PAE) of 40.5% was measured at 10 GHz. These results demonstrate the potential of the technique as a controllable and repeatable solution to decrease dispersion and produce power from GaN-based HEMTs without surface passivation.