Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and V OC
Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and V OC
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原位 Cd 饱和 MOCVD 生长的 CdTe 太阳能电池对 As 掺杂和 VOC 的影响
DOI：
10.1109/jphotov.2022.3195086
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发表时间：
2022
影响因子：
3
通讯作者：
Oklobia O
中科院分区：
文献类型：
--
作者：
Oklobia O
在350 °C的低温下通过金属有机化学气相沉积进行多晶CdTe：As薄膜的原位Cd饱和生长，以研究As掺杂和器件VOC的影响。器件表征显示出1014%的转换效率和772 mV的VOC，这是对在非饱和条件下在390 °C下生长的具有CdTe：As吸收层的基线器件的改进。当低温Cd饱和生长与在440 °C（与标准420 °C相比）的更高温度下氯热处理10 min相结合时，器件效率提高到约17%，具有877 mV的高VOC。结果表明，饱和Cd的CdTe：As器件的VOC从基线增加了100 mV。显微光致发光和时间分辨的光致发光测量这些镉饱和的碲化镉：作为设备上进行证实，少数载流子寿命显着提高。
In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversion efficiency of ∼14%, and VOCof 772 mV, which is an improvement to the baseline device with CdTe:As absorber layer grown at 390 °C under non-saturated conditions. When the low temperature Cd-saturated growth was combined with chlorine heat treatment at a higher temperature of 440 °C (in contrast with the standard 420 °C) for 10 min, device efficiency improved to ∼17% with a high VOCof 877 mV. As a result, ∼100 mV boost in VOCfrom baseline is demonstrated with Cd-saturated CdTe:As device. Micro-photoluminescence and time-resolved photoluminescence measurements performed on these Cd-saturated CdTe:As devices confirmed that minority carrier lifetime significantly improved.