Ultrahigh-Q AlGaAs-on-insulator microresonators for integrated nonlinear photonics.
Ultrahigh-Q AlGaAs-on-insulator microresonators for integrated nonlinear photonics.
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用于集成非线性光子学的超高 Q 绝缘体上 AlGaAs 微谐振器。
DOI：
10.1364/oe.405343
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发表时间：
2020
期刊：
影响因子：
3.8
通讯作者：
J. Bowers
中科院分区：
文献类型：
--
作者：
W. Xie;L. Chang;Haowen Shu;J. Norman;J. Peters;Xingjun Wang;J. Bowers
砷化铝镓（AlGaAs）和相关的III-V族半导体具有优异的光电性能。它们还具有强的材料非线性以及高折射率。鉴于这些特性，AlGaAs是集成光子学的一个有前途的候选者，包括线性和非线性器件，无源和有源器件以及相关应用。低传播损耗对于集成光子学是必不可少的，特别是在非线性应用中。然而，实现低损耗和高限制AlGaAs光子集成电路提出了挑战。在这里，我们展示了一个有效的减少表面粗糙度引起的散射损失完全蚀刻的高限制绝缘体上的AlGaAs波导通过使用异质晶片键合的方法和优化的制造技术。我们展示了超高质量的AlGaAs微谐振器，实现了高达3.52 × 106的品质因数和高达1.4 × 104的精细度。我们还展示了这些谐振器中的超高效频率梳生成，并分别在1 THz和90 GHz自由光谱范围的谐振器中实现了创纪录的低阈值功率，约为1.20 μW和1.120 μW。我们的研究结果为AlGaAs作为一种专门用于非线性光子学的新型集成材料平台的实现铺平了道路，并为基于芯片的效率要求高的实际应用打开了一个新的窗口。
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a promising candidate for integrated photonics, including both linear and nonlinear devices, passive and active devices, and associated applications. Low propagation loss is essential for integrated photonics, particularly in nonlinear applications. However, achieving low-loss and high-confinement AlGaAs photonic integrated circuits poses a challenge. Here we show an effective reduction of surface-roughness-induced scattering loss in fully etched high-confinement AlGaAs-on-insulator nanowaveguides by using a heterogeneous wafer-bonding approach and optimizing fabrication techniques. We demonstrate ultrahigh-quality AlGaAs microring resonators and realize quality factors up to 3.52 × 106 and finesses as high as 1.4 × 104. We also show ultra-efficient frequency comb generations in those resonators and achieve record-low threshold powers on the order of ∼20 µW and ∼120 µW for the resonators with 1 THz and 90 GHz free-spectral ranges, respectively. Our result paves the way for the implementation of AlGaAs as a novel integrated material platform specifically for nonlinear photonics and opens a new window for chip-based efficiency-demanding practical applications.
影响因子：
10.4
作者：
Wang, Cheng;Langrock, Carsten;Loncar, Marko
通讯作者：
Loncar, Marko
影响因子：
64.8
作者：
Zhang, Mian;Buscaino, Brandon;Loncar, Marko
通讯作者：
Loncar, Marko