Body-Biased Complementary Logic Implemented Using AlN Piezoelectric MEMS Switches
Body-Biased Complementary Logic Implemented Using AlN Piezoelectric MEMS Switches
复制标题
使用 AlN 压电 MEMS 开关实现体偏置互补逻辑
DOI：
10.1109/jmems.2011.2179015
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发表时间：
2009
影响因子：
2.7
通讯作者：
G. Piazza
中科院分区：
文献类型：
--
作者：
N. Sinha;Timothy S. Jones;Zhijun Guo;G. Piazza
本文报道了利用体偏氮化铝（AlN）压电微机电系统（MEMS）开关实现的低压互补机械逻辑。通过用固定电压偏置四端机械开关的等效体，可以精确调谐机械晶体管的阈值电压，并将用于实现数字功能的电压摆幅降低到非常低的值（≤±2 V）。由于使用了机械开关机制，AlN MEMS开关具有极低的亚阈值斜率（0.065 mV/dec），这将进一步降低电压摆幅至100 mV以下。通过使用相反的体偏置，相同的机械开关可以作为等效的n型或p型（互补）装置来操作。然后使用两个基本的AlN机械开关元件来形成一个体偏置逆变器，工作频率为100hz，电压摆幅为±1.5 v。此外，利用体偏置互补和薄膜（250 nm厚）铝基压电机械开关合成了低电压和功能完整的逻辑元件（NAND和NOR）。最后，推导了这些器件的缩放规则，并提出了实现进一步小型化需要解决的关键挑战。
This paper reports on the implementation of low-voltage complementary mechanical logic achieved by using body-biased aluminum nitride (AlN) piezoelectric microelectro-mechanical systems (MEMS) switches. By biasing the equivalent body of a four terminal mechanical switch with a fixed voltage, the threshold voltage of the mechanical transistor has been precisely tuned and the voltage swing used for implementing digital functionalities reduced to very low values (≤ ±2 V). Thanks to the use of a mechanical switching mechanism, the AlN MEMS switches have exhibited an extremely low subthreshold slope (0.065 mV/dec), which sets the promise for even further reduction of the voltage swing to less than 100 mV. By using opposite body biases, the same mechanical switch has been made to operate as an equivalent n-like or p-like (complementary) device. Two basic AlN mechanical switch elements have then been used to form a body-biased inverter operating at 100 Hz with a ±1.5-V voltage swing. Furthermore, low voltage and functionally complete logic elements (NAND and NOR) implemented by using body-biased complementary and thin-film (250 nm thick) AlN-based piezoelectric mechanical switches have been synthesized. Finally, scaling rules for these devices are derived, and the key challenges that will need to be addressed to achieve further miniaturization are presented.