Parasitic capacitance of submicrometer MOSFET's
Parasitic capacitance of submicrometer MOSFET's
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DOI：
10.1109/16.784191
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发表时间：
1999-09
影响因子：
3.1
通讯作者：
Kunihiro Suzuki
中科院分区：
文献类型：
--
作者：
Kunihiro Suzuki
We systematically investigated the dependence of parasitic capacitance on gate length, gate electrode thickness, and gate oxide thickness using a 2-D device simulator. We showed that the model commonly used for parasitic capacitance is not accurate and also showed that more the rigorous model proposed by Kamchouchi should be used for submicrometer devices. Furthermore, we proposed a simple model that ensures the same accuracy as that of the Kamchouchi model.
