Enhancement in solar hydrogen generation efficiency using a GaN-based nanorod structure
Enhancement in solar hydrogen generation efficiency using a GaN-based nanorod structure
复制标题
DOI：
10.1063/1.4803926
复制
发表时间：
2013-05
影响因子：
4
通讯作者：
J. Benton;J. Bai;Tao Wang
中科院分区：
文献类型：
--
作者：
J. Benton;J. Bai;Tao Wang
使用GaN基纳米棒阵列结构作为光电电极，与由相同母片制成的平面结构相比，太阳能氢气产生的能力得到了显著的提高。纳米棒阵列结构是通过使用自组织镍纳米掩模进行干法腐蚀而形成的。在相同的光照条件下，纳米棒阵列结构的光电极表现出6倍的光电流增强和7倍的产氢速率。太阳能产氢能力的提高归因于光吸收面积的显著改善、光生载流子向半导体/电解液界面迁移的距离的缩短和表面能带的弯曲。
A significant enhancement in solar hydrogen generation has been achieved using a GaN-based nanorod array structure as a photoelectrode in comparison with a planar one fabricated from the same parent wafer. The nanorod array structure was formed by dry etching using a self-organised nickel nanomask. Under identical illumination conditions in hydrochloric acid solution, the photoelectrode with the nanorod array structure has demonstrated a photocurrent enhancement with a factor of 6 and an enhancement in the rate of hydrogen generation with a factor of 7. The enhancement in solar hydrogen generation is attributed to a massive improvement in light absorption area, reduced travelling distance for the migration of the photogenerated carriers to the semiconductor/electrolyte interface, and surface band bending.