Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs
Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs
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DOI：
10.1109/irps45951.2020.9129637
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发表时间：
2020-04
期刊：
影响因子：
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通讯作者：
J. González;O. Alatise;P. Mawby
中科院分区：
文献类型：
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作者：
J. González;O. Alatise;P. Mawby
尽管新一代功率器件不断改进，SiC功率MOSFET的栅氧化层可靠性仍然是一个挑战。由偏置温度不稳定性（BTI）引起的阈值电压漂移已经成为不同研究的主题，并且已经提出了评估阈值电压漂移的真实的幅度的方法。这些方法通常侧重于阈值电压偏移的表征，而不是其对操作的影响或在应用期间如何检测阈值电压偏移。本文提出了两种非侵入性的方法，可以评估和确定的影响BTI引起的。所提出的方法能够捕捉峰值位移和随后的恢复后，应力消除
The gate oxide reliability of SiC power MOSFETs remains a challenge, despite the improvements of the new generation power devices. The threshold voltage drift caused by Bias Temperature Instability (BTI) has been subject of different studies and methods have been proposed to evaluate the real magnitude of the threshold voltage shift. These methodologies usually focus on the characterization of the threshold voltage shift, rather than its implications to the operation or how the threshold voltage shift can be detected during the application. This paper presents two non-intrusive methodologies which can assess and determine the impact of BTI-induced. The proposed methodologies are able to capture the peak shift and subsequent recovery after stress removal