PHOTOELECTRONIC PROCESSES IN RUTILE
PHOTOELECTRONIC PROCESSES IN RUTILE
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DOI：
10.1103/physrev.184.979
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发表时间：
1969-01-01
期刊：
影响因子：
--
通讯作者：
ADDISS, RR
中科院分区：
文献类型：
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作者：
GHOSH, AK;WAKIM, FG;ADDISS, RR
从各种各样的实验，其中包括光电导和光致发光激发光谱，热释光，热刺激电流，电反射光谱，光电导的动力学响应，以及光和热漂白的陷阱，检测到大量的缺陷能级。一个一致的解释所有的数据，结合预期的晶体场分裂的知识，导致指定的具体水平和观察到的过渡到Ti 3+间隙离子。该中心也负责0.85 μ的发光发射。检测到至少8个浅陷阱能级（< 1 eV），并讨论了其中一个能级与氧空位的可能关系。这些陷阱的热电离能，确定从热释光辉光的初始上升，是在良好的协议与费米能级分析的热刺激电流曲线确定的。从利用改进的光学漂白技术的实验结果中发现，这些水平中的一些的光电离能是它们的热电离能的2.5倍。光电导激发谱中的结构强度取决于陷阱中的电子布居数。光致发光激发光谱中3.2 eV（0.39 μ）处的结构（当陷阱被填充时，在光电流激发光谱中也可以看到）被认为与直接光学跃迁的开始有关。
From a wide variety of experiments which include photoconductivity and photoluminescence excitation spectra, thermoluminescence, thermally stimulated current, electroreflectance spectra, kinetic response of photoconductivity, and optical and thermal bleaching of traps, a large number of defect energy levels were detected. A consistent interpretation of all of the data, combined with a knowledge of expected crystal field splittings, leads to the assignment of specific levels and observed transitions to Ti 3+ interstitial ions. This center is also responsible for the luminescence emission at 0.85 μ. At least eight shallow-trap levels (< 1 eV) were detected, and the possible assignment of one of these levels to oxygen vacancies is discussed. The thermal ionization energies of these traps, determined from the initial rise of the thermoluminescence glow, are in good agreement with those determined from Fermi-level analysis of the thermally stimulated current curves. The optical ionization energies of some of these levels were found to be 2.5 times their thermal ionization energies from the results of experiments utilizing modified optical bleaching techniques. The intensity of structures in photoconductivity excitation spectra depends on the electron population of the traps. A structure at 3.2 eV (0.39 μ) in photoluminescence excitation spectra (seen also in photocurrent excitation spectra when the traps are populated) is believed to be related to the onset of direct optical transitions.