FET performance and substitution effect on 2, 6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors
FET performance and substitution effect on 2, 6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors
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光辐照二酮前驱体制备的 2, 6-二噻吩基蒽器件的 FET 性能和替代效应
DOI：
10.1039/c2cc35439j
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
Hiroko Yamada; Chika Ohashi; Tatsuya Aotake; Shuhei Katsuta; Yoshihito Honsho; Hiroo Kawano; Tetsuo Okujima; Hidemitsu Uno; Noboru Ono; Shu Seki Ken-ichi Nakayama
中科院分区：
文献类型：
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作者：
S. H. Kim;M. Yokoyama;N. Taoka;R. Nakane;T. Yasuda;0. Ichikawa;N. Fukuhara;M. Hata;M. Takenaka and S. Takagi;Hiroko Yamada; Chika Ohashi; Tatsuya Aotake; Shuhei Katsuta; Yoshihito Honsho; Hiroo Kawano; Tetsuo Okujima; Hidemitsu Uno; Noboru Ono; Shu Seki Ken-ichi Nakayama
空穴迁移率通过顶接触底栅场效应晶体管和时间分辨微波电导率测量在2，6-二噻吩基蒽和己基取代的2，6-二噻吩基蒽薄膜中进行了评估，所述薄膜通过旋涂其α-二酮前体然后进行光照射来制备，揭示了半导体薄膜的足够高的电势，在光照射的薄膜中电荷载流子迁移率为0.8-0.9 cm 2 V−1 s−1。
Hole mobility was evaluated by top-contact bottom gate field effect transistor and time resolved microwave conductivity measurements in 2,6-dithienylanthracene and hexyl-substituted 2,6-dithienylanthracene films prepared by spin-coating of their α-diketone precursors followed by photoirradiation, revealing enough high potentials for semiconducting films with charge carrier mobilities of 0.8–0.9 cm2 V−1 s−1 in the photo-irradiated films.