Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays
Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays
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DOI：
10.1063/1.4844615
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发表时间：
2013-12
影响因子：
4
通讯作者：
A. Craig;A. Marshall;Z. Tian;S. Krishna;A. Krier
中科院分区：
文献类型：
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作者：
A. Craig;A. Marshall;Z. Tian;S. Krishna;A. Krier
采用界面失配阵列生长模式，在GaAs衬底上制备了InAs0.79Sb0.21基nBn光电探测器。在暗电流密度的两个以上的数量级在300 K和六个以上的数量级在200 K的减少被发现，与InAs 0.87Sb 0.13 p-i-n二极管相比。在-0.5 V外加偏压下，发现暗电流在150 K以上受到扩散限制。在150 K时，本底限制的红外光电探测和R_0 A值超过106 Ω cm ~ 2。在200 K时，光谱响应的截止波长为5.3 μm。
InAs0.79Sb0.21-based nBn photodetectors were fabricated on a GaAs substrate, using the interfacial misfit array growth mode. Reductions in the dark current density of more than two orders of magnitude at 300 K and more than six orders of magnitude at 200 K were found, in comparison with an InAs0.87Sb0.13 p-i-n diode. At −0.5 V applied bias, the dark currents were found to be diffusion limited above 150 K. Background limited infrared photodetection and R0A values in excess of 106 Ωcm2 were observed at 150 K. Spectral response measurements revealed a cut-off wavelength of 5.3 μm at 200 K.