Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity
Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity
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DOI：
10.1063/5.0095457
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发表时间：
2022-06
影响因子：
3.2
通讯作者：
K. Kojima;Shin‐ichiro Sato;T. Ohshima;S. Kuroki
中科院分区：
文献类型：
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作者：
K. Kojima;Shin‐ichiro Sato;T. Ohshima;S. Kuroki
采用热壁化学气相沉积系统，成功地生长了4 H-SiC外延层，其电阻率超过10 ~（10）Ω cm。钒掺杂外延层的电阻率被发现是强烈依赖于掺杂剂杂质的类型。掺杂钒的n型半绝缘4 H-SiC外延层的电阻率比p型外延层的电阻率对钒掺杂的依赖性更强。这意味着，钒原子的载流子陷阱特性可能相对于电子和空穴而不同。结果表明，掺钒的n型4 H-SiC外延层的电阻率超过1010 Ω cm。
4H-SiC epitaxial layers with ultrahigh resistivity of over 1010 Ω cm were successfully grown by using a hot wall chemical vapor deposition system with vanadium doping. The resistivity of the vanadium doped epilayer was found to be strongly dependent on the types of dopant impurities. The resistivity of n-type-based vanadium doped semi-insulating 4H-SiC epilayers showed stronger dependence on vanadium incorporation than that of p-type-based epilayers. This means that the carrier trap characteristics of vanadium atoms may differ with respect to electrons and holes. As the result, an ultrahigh resistivity of over 1010 Ω cm was realized on an n-type-based 4H-SiC epilayer with vanadium doping.