Spectroscopic and Photoluminescent Properties of Indium Zinc Oxide (IZO) and IZO/Ag/IZO Sandwiched Film

Spectroscopic and Photoluminescent Properties of Indium Zinc Oxide (IZO) and IZO/Ag/IZO Sandwiched Film
复制标题

DOI:
10.1007/s11664-017-5476-y
复制
发表时间:
2017-04
影响因子:
2.1
通讯作者:
Kazuki Yanome;T. Kiba;M. Kawamura;Y. Abe;K. Kim;J. Takayama;A. Murayama
Kazuki Yanome;T. Kiba;M. Kawamura;Y. Abe;K. Kim;J. Takayama;A. Murayama
中科院分区:
工程技术4区
文献类型:
--
作者:
Kazuki Yanome;T. Kiba;M. Kawamura;Y. Abe;K. Kim;J. Takayama;A. Murayama

文献摘要

相似文献

我们报告了氧化铟锌 (IZO) 薄膜的椭圆偏振和光致发光 (PL) 特性,该薄膜是在 Ar 和 O2 气氛下通过射频溅射生长的。与在 Ar 气氛下生长的薄膜 (IZO (Ar)) 相比,在 O2 气氛下生长的 IZO 薄膜 (IZO (O2)) 显示出增强的 PL 特性,特别是在带边发射方面。带边发射的增强可归因于与氧空位相关的非发射缺陷态的减少,这些缺陷态在O2气氛下通过溅射进行修复,而绿色区域的PL增强可能是由于在过量氧环境下形成了不同类型的缺陷。时间分辨 PL 测量结果也支持了这一点,其中 IZO (Ar) 的带边发射显示出快速衰减,寿命为 50 ps,这表明松弛路径在潜在缺陷态中占主导地位。相比之下,IZO (O2) 的带边和发射缺陷态的 PL 衰减曲线显示出中等衰减,时间常数分别为 2.3 ns 和 5.7 ns。激子弛豫动力学对缺陷态的存在及其类型敏感,而缺陷态由生长条件控制。
We report the ellipsometric and photoluminescence (PL) properties of Indium zinc oxide (IZO) films, which were grown by radio frequency sputtering under Ar and O2atmospheres. IZO films grown under an O2atmosphere (IZO (O2)) showed enhanced PL properties when compared to the films grown under an Ar atmosphere (IZO (Ar)), particularly with respect to the band-edge emission. The enhancement of band-edge emission can be attributed to the reduction in the non-emissive defect states related to oxygen vacancies, which were repaired by sputtering under O2atmosphere, whereas the PL enhancement in green region is probably due to the formation of the different types of defects under the excess oxygen environment. This was also supported by the results of time-resolved PL measurements, where the band-edge emission of IZO (Ar) showed rapid decay with a 50 ps lifetime, which indicates the dominance of the relaxation pathway to underlying defect states. In contrast, the PL decay profiles of IZO (O2) for band-edge and emissive defect states showed moderate decay with time-constants of 2.3 ns and 5.7 ns, respectively. The exciton relaxation dynamics were sensitive to the presence and its kinds of defect states, which were controlled by the growth conditions.