Organosilane Monolayer Resists for Scanning Probe Lithography
Organosilane Monolayer Resists for Scanning Probe Lithography
复制标题
用于扫描探针光刻的有机硅烷单层光刻胶
DOI：
--
复制
发表时间：
1997
期刊：
影响因子：
--
通讯作者：
N. Nakagiri
中科院分区：
文献类型：
--
作者：
H. Sugimura;N. Nakagiri
本文报道了利用化学气相沉积和扫描探针光刻（SPL）技术制备有机硅烷单分子膜。分别以六甲基二硅氮烷[（CH 3）3Si-NH-Si（CH 3）3]和十八烷基三甲氧基硅烷[CH 3（CH 2）17 Si（OCH 3）3]为前体分子，在Si衬底上制备了两种不同烷基结构的硅基单层膜，即三甲基硅基[（CH 3）3Si-，TMS]和十八烷基硅基[CH 3（CH 2）17 Si-，ODS]。这些单层膜的厚度估计由椭圆偏振法分别为0.4和2.0 nm，因此，得出的结论是由它们的烷基链长度。使用具有导电探针的原子力显微镜（AFM），通过使电流流过AFM探针/样品结来图案化用TMS或ODS单层沉积的Si样品。通过在NH 4F和H2 O2的水溶液中的化学蚀刻将由此在单层上制造的图案转移到衬底Si。在探针通过的区域中，蚀刻区域选择性地进行，因为在这些区域中，单层已经电化学降解。图案化完全通过探针扫描完成，而不需要进一步的显影步骤。因此，抗蚀剂可以被认为是自显影的。TMS和ODS都成功地用作这种SPL抗蚀剂。
We report the preparation of organosilane monolayers by means of chemical vapor deposition and scanning probe lithography (SPL) using these monolayers as resists. Two types of monolayers having different alkyl groups, that is, trimethylsilyl [(CH3)3Si-, TMS] and octadecylsilyl [CH3(CH2)17Si-, ODS] monolayers, were deposited on Si substrate from precursor molecules of hexamethyldisilazane [(CH3)3Si-NH-Si(CH3)3, ] and octadecyltrimethoxysilane [CH3(CH2)17Si(OCH3)3], respectively. The thicknesses of these monolayers as estimated by ellipsometry were 0.4 and 2.0nm, respectively, and, therefore, were concluded to be defined by their alkyl chain lengths. Using an atomic force microscope (AFM) with an electrically conductive probe, a Si sample deposited with a TMS or ODS monolayer was patterned by flowing current through the AFM-probe/sample junction. The pattern thus fabricated on the monolayer was transferred to the substrate Si by chemical etching in an aqueous solution of NH4F and H2O2. The etching proceeded area-selectively in the regions where the probe had passed, since, in these regions, the monolayer had been electrochemically degraded. The patterning was entirely accomplished through probe scanning without any need for further developing steps. The resist can thus be regarded as being self-developing. Both TMS and ODS successfully served as such SPL resists.