Strategy for Preparing Al-Doped ZnO Thin Film with High Mobility and High Stability
Strategy for Preparing Al-Doped ZnO Thin Film with High Mobility and High Stability
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DOI：
10.1021/cg101216z
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发表时间：
2011-01
影响因子：
3.8
通讯作者：
Zhibing Zhan;Jiye Zhang;Qinghong Zheng;D. Pan;Jin Huang;F. Huang;Zhang Lin
中科院分区：
文献类型：
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作者：
Zhibing Zhan;Jiye Zhang;Qinghong Zheng;D. Pan;Jin Huang;F. Huang;Zhang Lin
理想的Al掺杂ZnO（AZO）薄膜应具有高载流子迁移率和载流子浓度，以及高热稳定性和化学稳定性。为了实现这些特性，ZnO 应重度掺杂 Al 并完美结晶。通过分析气相沉积过程中AZO薄膜中元素可能的价态和局域晶格结构，我们发现目前的气相沉积方法可能遇到一个内在障碍，即无法同时实现Al的重掺杂、高热稳定性和高迁移率（完美结晶度）。然而，基于氧化气氛中制备的AZO薄膜实际上伴随着高浓度的锌空位的理解，我们提出了一种获得具有理想特性的AZO薄膜的策略。在氧化气氛下，采用气相沉积方法制备具有高浓度锌空位的重掺杂AZO薄膜。然后采用锌蒸气退火处理...
Ideal Al-doped ZnO (AZO) thin films should have high carrier mobility and carrier concentration, as well as high thermal and chemical stability. To achieve these properties, ZnO should be heavily doped with Al and perfectly crystallized. Through analyzing the possible valence state of the elements and local lattice structures of AZO films during the gas-phase deposition process, we find that the current gas-phase deposition method may encounter an intrinsic obstacle that heavy doping of Al, high thermal stability, and high mobility (perfect crystallinity) cannot be achieved simultaneously. However, based on the understanding that an AZO thin film prepared in oxidizing atmosphere is actually accompanied with a high concentration of zinc vacancy, we propose a strategy to obtain an AZO film with ideal characteristics. Under an oxidizing atmosphere, a heavily doped AZO film with a high concentration of zinc vacancy is prepared using a gas-phase deposition method. Then a zinc vapor annealing treatment is emplo...