Novel Self-Modulated Lateral Superjunction Device Suppressing the Inherent 3-D JFET Effect
Novel Self-Modulated Lateral Superjunction Device Suppressing the Inherent 3-D JFET Effect
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DOI：
10.1109/led.2020.3009994
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发表时间：
2020-07
影响因子：
4.9
通讯作者：
Wentong Zhang;Junqing He;Shikang Cheng;Sen Zhang;Boyong He;M. Qiao;Zhaoji Li;Bo Zhang
中科院分区：
文献类型：
--
作者：
Wentong Zhang;Junqing He;Shikang Cheng;Sen Zhang;Boyong He;M. Qiao;Zhaoji Li;Bo Zhang
A novel self-modulated superjunction lateral double-diffused MOSFET (SM-SJ LDMOS) is proposed and experimentally realized in this letter. When a SJ is introduced into a lightly doped N-drift region, the 3-D depletion regions appear surrounding the P-pillars. This 3-D junction field effect transistor (JFET) effect decreases the current paths in both N-pillars and N-drift, causing a largely increased specific on-resistance <inline-formula> <tex-math notation="LaTeX">${R} _{\text {on,sp}}$ </tex-math></inline-formula> especially for the SJ with a narrow cell pitch. To suppress the inherent 3-D JFET effect, the SM-SJ structure is proposed by replacing the P-pillars with a series of P-islands. These P-islands with linearly reduced lengths modulate the surface electric field to increase the breakdown voltage <inline-formula> <tex-math notation="LaTeX">${V} _{{\text {B}}}$ </tex-math></inline-formula> while the N-drift areas between P-islands weaken the 3-D JFET effect to reduce <inline-formula> <tex-math notation="LaTeX">${R} _{\text {on,sp}}$ </tex-math></inline-formula>. Compared with the conventional SJ device, the measured <inline-formula> <tex-math notation="LaTeX">${V} _{\text {B}}$ </tex-math></inline-formula> of the SM-SJ LDMOS is increased by 53.1% from 260 V to 398 V with <inline-formula> <tex-math notation="LaTeX">${R} _{on,sp}$ </tex-math></inline-formula> reduced by 22.3% from 35.4 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega ~\cdot $ </tex-math></inline-formula>cm<sup>2</sup> to 27.5 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega ~\cdot $ </tex-math></inline-formula>cm<sup>2</sup>.
A novel self-modulated superjunction lateral double-diffused MOSFET (SM-SJ LDMOS) is proposed and experimentally realized in this letter. When a SJ is introduced into a lightly doped N-drift region, the 3-D depletion regions appear surrounding the P-pillars. This 3-D junction field effect transistor (JFET) effect decreases the current paths in both N-pillars and N-drift, causing a largely increased specific on-resistance <inline-formula> <tex-math notation="LaTeX">${R} _{\text {on,sp}}$ </tex-math></inline-formula> especially for the SJ with a narrow cell pitch. To suppress the inherent 3-D JFET effect, the SM-SJ structure is proposed by replacing the P-pillars with a series of P-islands. These P-islands with linearly reduced lengths modulate the surface electric field to increase the breakdown voltage <inline-formula> <tex-math notation="LaTeX">${V} _{{\text {B}}}$ </tex-math></inline-formula> while the N-drift areas between P-islands weaken the 3-D JFET effect to reduce <inline-formula> <tex-math notation="LaTeX">${R} _{\text {on,sp}}$ </tex-math></inline-formula>. Compared with the conventional SJ device, the measured <inline-formula> <tex-math notation="LaTeX">${V} _{\text {B}}$ </tex-math></inline-formula> of the SM-SJ LDMOS is increased by 53.1% from 260 V to 398 V with <inline-formula> <tex-math notation="LaTeX">${R} _{on,sp}$ </tex-math></inline-formula> reduced by 22.3% from 35.4 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega ~\cdot $ </tex-math></inline-formula>cm<sup>2</sup> to 27.5 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega ~\cdot $ </tex-math></inline-formula>cm<sup>2</sup>.