A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons
A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons
复制标题
DOI：
10.1088/1361-6463/ab37c6
复制
发表时间：
2019-11-13
影响因子：
3.4
通讯作者：
Zavrtanik, M.
中科院分区：
文献类型：
--
作者：
Bani, L.;Alexopoulos, A.;Zavrtanik, M.
我们测量了化学气相沉积(CVD)生长的多晶和单晶金刚石样品在辐照前后的电荷量，测量了每个样品上制作的50微米间距的带状探测器的辐射耐受性。一组800 MeV质子和第二组24 GeV质子分步辐照到(1.34+/-0.08×10(16))质子cm(-2)和(1.80+/-0.18×10(16))质子cm(-2)。根据一条简单的损伤曲线，我们观察到多晶CVD金刚石和单晶CVD金刚石的电子和空穴的平均漂移路径之和随着辐照剂量的增加而减小，该曲线由每个辐照能量和辐照剂量的损伤常数表征。我们发现，对于每个辐照能量，多晶CVD金刚石的损伤常数在统计误差范围内与单晶CVD钻石的损伤常数相同。结果表明，经24 GeV质子辐照的金刚石的损伤常数为0.62(-0.01)(+0.01)(Stat)(+0.06)(-0.06)(Syst)x 10(-18)cm(2)(Pmum)(-1)，800 MeV质子辐照的金刚石的损伤常数为1.04(+0.02)(-0.02)(Stat)(-0.04)(-0.05)(Syst)x10(-18)cm(2)(pµm)(-1)此外，我们观察到，对于多晶CVD材料，在24GeV质子辐照和800 MeV质子辐照下，FWHM/MP脉冲高度随注量的减少而减小，而对于单晶CVD材料，在24GeV质子辐照和800 MeV质子辐照下，FWHM/MP脉冲高度不随注量变化。最后，我们测量了每个样品的均匀性随注量的变化，观察到对于多晶CVD金刚石，样品的均匀性随着注量的增加而变得更加均匀，而对于单晶CVD金刚石，样品的均匀性不随注量的变化而改变。
We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 mu m pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to (1.34 +/- 0.08 x 10(16)) protons cm(-2) and (1.80 +/- 0.18 x 10(16)) protons cm(-2) respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be 0.62( -0.01)(+0.01) (stat) (+0.06)(-0.06) (syst) x 10(-18) cm(2) (p mu m)(-1) and the damage constant for diamond irradiated with 800 MeV protons to be 1.04 (+0.02)(-0.02) (stat) (-0.04)(-0.05) (syst) x 10(-18) cm(2) (p mu m)(-1) Moreover, we observe the FWHM/MP pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.