Structural changes in amorphous GexSiOy on the way to nanocrystal formation
Structural changes in amorphous GexSiOy on the way to nanocrystal formation
复制标题
DOI：
10.1088/0957-4484/24/16/165701
复制
发表时间：
2013-04
期刊：
影响因子：
3.5
通讯作者：
A. Nyrow;C. Sternemann;C. Sahle;A. Hohl;M. Zschintzsch-Dias;A. Schwamberger;K. Mende;I. Brinkmann;M. M. Sala-M.;R. Wagner;A. Meier;F. Völklein;M. Tolan
中科院分区：
文献类型：
--
作者：
A. Nyrow;C. Sternemann;C. Sahle;A. Hohl;M. Zschintzsch-Dias;A. Schwamberger;K. Mende;I. Brinkmann;M. M. Sala-M.;R. Wagner;A. Meier;F. Völklein;M. Tolan
用Ge的K边X射线吸收近边谱和Si的L 2/3边X射线拉曼散射谱研究了温度引起的大块非晶GexSiOy局域化学结构的变化。揭示了不同的过程，导致形成的Ge区域嵌入在Si氧化物基质中，由于不同的初始结构的制备样品，取决于它们的Ge/Si/O比和温度处理，最终导致发生纳米晶体。这里，可以采用GeOx和SiOx区域的结晶化和/或通过纯Si或通过周围的Si低价氧化物基质的Ge氧化物的还原来沿着嵌入基质的化学组成调整Ge纳米晶体的尺寸。这对于优化材料的电子和发光性质是重要的。
Temperature induced changes of the local chemical structure of bulk amorphous GexSiOy are studied by Ge K-edge x-ray absorption near-edge spectroscopy and Si L2/3-edge x-ray Raman scattering spectroscopy. Different processes are revealed which lead to formation of Ge regions embedded in a Si oxide matrix due to different initial structures of as-prepared samples, depending on their Ge/Si/O ratio and temperature treatment, eventually resulting in the occurrence of nanocrystals. Here, disproportionation of GeOx and SiOx regions and/or reduction of Ge oxides by pure Si or by a surrounding Si sub-oxide matrix can be employed to tune the size of Ge nanocrystals along with the chemical composition of the embedding matrix. This is important for the optimization of the electronic and luminescent properties of the material.