Theoretical determination of the temporal and spatial structure of /spl alpha/-particle induced electron-hole pair generation in silicon
Theoretical determination of the temporal and spatial structure of /spl alpha/-particle induced electron-hole pair generation in silicon
复制标题
硅中 /spl α/-粒子诱导电子空穴对产生的时空结构的理论测定
DOI：
10.1109/23.903811
复制
发表时间：
2000
影响因子：
1.8
通讯作者：
M. Ieong
中科院分区：
文献类型：
--
作者：
P. Oldiges;R. Dennard;D. Heidel;B. Klaasen;F. Assaderaghi;M. Ieong
对硅中的碰撞电离过程进行了基于物理的建模，以确定/spl α/-粒子撞击后电子-空穴对的时间常数和径向分布。径向分布呈现出高斯形状，半径约为50 nm。碰撞电离过程发生在一个小于约500 fsec的时间段内，这意味着用于半导体器件模拟的时间常数约为几百fsec，这个值比早期器件模拟工作中使用的时间常数小得多。然后，器件模拟表明，使用这些较短的时间常数的含义是在较短的时间内产生较高浓度的电子-空穴对，这对MOS晶体管的源极和漏极之间的粒子撞击产生较强的分流效应。
Physics-based modeling of the impact ionization process in silicon was performed to determine the time constants and radial distribution of electron-hole pairs after an /spl alpha/-particle strike. The radial distribution exhibited a Gaussian shape with a radius of approximately 50 nm. The impact ionization process took place over a period of less than approximately 500 fsec, implying time constants for use in semiconductor device simulations on the order of a few hundred fsec, a value much smaller than has been used in earlier device simulation work. Device simulations then show that the implication of using these shorter time constants is the creation of a higher concentration of electron-hole pairs at shorter times that cause stronger shunting effects for /spl alpha/-particle strikes between source and drain of MOS transistors.