Unconventional field-effect transistor composed of electrons floating on liquid helium
Unconventional field-effect transistor composed of electrons floating on liquid helium
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DOI：
10.1088/1361-648x/aae5ef
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发表时间：
2018-11-21
影响因子：
2.7
通讯作者：
Pollanen, J.
中科院分区：
文献类型：
--
作者：
Nasyedkin, K.;Byeon, H.;Pollanen, J.
我们报道了一种非常规的宏观场效应晶体管，它由浮在超流氦表面上的电子组成。利用该装置，实现了独特的传输机制，其中电子层的电荷密度可以以在其他材料系统中不可能的方式控制。特别是，我们能够操纵电子的集体行为，以产生高度不均匀但精确控制的电荷密度，从而揭示负源极-漏极电流。这种行为可以通过考虑阻尼电荷振荡沿着传输线的传播来理解，该传输线由晶体管的源极和漏极上方和之间的二维电子的不均匀片形成。
We report on an unconventional macroscopic field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron layer can be controlled in a manner not possible in other material systems. In particular, we are able to manipulate the collective behavior of the electrons to produce a highly non-uniform, but precisely controlled, charge density to reveal a negative source-drain current. This behavior can be understood by considering the propagation of damped charge oscillations along a transmission line formed by the inhomogeneous sheet of two-dimensional electrons above, and between, the source and drain electrodes of the transistor.