Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition
Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition
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DOI：
10.1021/nl300584r
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发表时间：
2012-09-01
期刊：
影响因子：
10.8
通讯作者：
Pop, Eric
中科院分区：
文献类型：
--
作者：
Behnam, Ashkan;Lyons, Austin S.;Pop, Eric
我们研究了石墨烯纳米管（GNR）的互连从石墨烯化学气相沉积（CVD）生长。我们报告低场和高场的电气测量在很宽的温度范围内，从1.7到900 K。室温迁移率在100至500 cm（2）.V-1. s（-1）的范围内，与来自剥离的石墨烯的GNR相当，表明体缺陷或晶界在小于CVD石墨烯微晶尺寸的器件中几乎不起作用。在高电场下，峰值电流密度受到焦耳加热的限制，但少量的热工程使我们能够达到2 × 10（9）A/cm（2），这是纳米级CVD石墨烯互连的最高报告。在低于5 K的温度下，短GNR充当量子点，其尺寸与其长度相当，突出了金属接触在限制传输中的作用。我们的研究说明了CVD生长GNRs的机会，同时揭示了可变性和接触作为未来的挑战。
We study graphene nanoribbon (GNR) interconnects obtained from graphene grown by chemical vapor deposition (CVD). We report low- and high-field electrical measurements over a wide temperature range, from 1.7 to 900 K. Room temperature mobilities range from 100 to 500 cm(2).V-1.s(-1), comparable to GNRs from exfoliated graphene, suggesting that bulk defects or grain boundaries play little role in devices smaller than the CVD graphene crystallite size. At high-field, peak current densities are limited by Joule heating, but a small amount of thermal engineering allows us to reach similar to 2 X 10(9) A/cm(2), the highest reported for nanoscale CVD graphene interconnects. At temperatures below similar to 5 K, short GNRs act as quantum dots with dimensions comparable to their lengths, highlighting the role of metal contacts in limiting transport. Our study illustrates opportunities for CVD-grown GNRs, while revealing variability and contacts as remaining future challenges.