Stochastic simulation of thermally assisted magnetization reversal in sub-100 nm dots with perpendicular anisotropy
Stochastic simulation of thermally assisted magnetization reversal in sub-100 nm dots with perpendicular anisotropy
复制标题
垂直各向异性亚 100 nm 点热辅助磁化反转的随机模拟
DOI：
10.1016/j.jmmm.2008.12.003
复制
发表时间：
2009
期刊：
影响因子：
--
通讯作者：
K. Matsuyama
中科院分区：
文献类型：
--
作者：
B. Purnama;M. Koga;Y. Nozaki;K. Matsuyama
采用微磁Langevin模型研究了亚100nm垂直各向异性量子点的热助磁化反转。两种不同的反转模式的性能进行了比较（i）减少势垒写入方案和（ii）居里点写入方案。对于减少势垒写入方案，开关场Hswt随着写入温度的增加而减小，但仍大于居里点写入方案的开关场。对于居里点写入方案，从50个模拟结果评估的所需阈值场Hth在一个值处饱和，该值不简单地与能垒高度相关。由于磁有序化过程的动态方面，随着冷却时间的减少，Hth的值增加。系统地研究了Hthon材料参数与点尺寸的关系。
Thermally assisted magnetization reversal of sub-100nm dots with perpendicular anisotropy has been investigated using a micromagnetic Langevin model. The performance of the two different reversal modes of (i) a reduced barrier writing scheme and (ii) a Curie point writing scheme are compared. For the reduced barrier writing scheme, the switching field Hswtdecreases with an increase in writing temperature but is still larger than that of the Curie point writing scheme. For the Curie point writing scheme, the required threshold field Hth, evaluated from 50 simulation results, saturates at a value, which is not simply related to the energy barrier height. The value of Hthincreases with a decrease in cooling time owing to the dynamic aspects of the magnetic ordering process. Dependence of Hthon material parameters and dot sizes has been systematically studied.
矩形 MRAM 单元磁化反转中开关电流和能垒的尺寸依赖性
DOI：
--
发表时间：
2003
期刊：
Journal of Applied Physics 93・10
影响因子：
--
作者：
F.Qin et al.;Y.Nozaki et al.;M.Zhang et al.;M.Zhang et al.;F.Qin et al.;Y.Nozaki et al.;F.qin et al.;M.Zhang et al.;F.Qin et al.;F.Qin et al.;M.Zhang et al.;M.Zhang et al.;F.Qin et al.;F.Qin et al.;F.Qin et al.;H.Oishi et al.;Y.Nozaki et al.;J.Kikuchi et al.;F.Qin et al.;F.Qin et al.;F.Qin et al.;H.Oishi et al.;Y.Nozaki et al.;J.Kikuchi et al.;F.Qin et al.;Y.Nozaki et al.;F.Qin et al.;Y.Nozaki et al.;K.Matsuyama et al.;Y.Nozaki et al.
通讯作者：
Y.Nozaki et al.