Electrical and Sensing Properties of Single-Walled Carbon Nanotubes Network: Effect of Alignment and Selective Breakdown
Electrical and Sensing Properties of Single-Walled Carbon Nanotubes Network: Effect of Alignment and Selective Breakdown
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DOI：
10.1002/elan.200900314
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发表时间：
2010-01-01
期刊：
影响因子：
3
通讯作者：
Myung, Nosang V.
中科院分区：
文献类型：
--
作者：
Lim, Jae-Hong;Phiboolsirichit, Nopparat;Myung, Nosang V.
介绍并讨论了随机定向和排列的SWNT网络的电传递和NH3传感特性。结果表明，排列的swnt -FET由于减少了相互连接的节点数量而具有更好的FET特性。当设备的电阻增加时，情况尤其如此。门控电击穿是为了选择性地去除金属（m-）单壁碳纳米管，从而减少散射中心。该技术显著改善了FET的特性，导致更大的开/关比（例如10(4)）。交流介电定向后m-SWNT的选择性电击穿可显著增强SWNT网络的半导体特性，从而产生高灵敏度的传感器。
The electrical transport and NH3 sensing properties of randomly oriented and aligned SWNT networks were presented and discussed. The results indicate that aligned SWNT-FETs have better FET characteristics due to the reduced number of interconnected nodes. This was particularly true as the resistance of the devices increased. Gated electrical breakdown was implemented to selectively remove metallic (m-) SWNTs, thereby reducing scattering centers. This technique provided significant improvements in FET characteristics resulting in greater on/off ratio (e.g. 10(4)). AC dielectrophoretic alignment followed by selective electrical breakdown of m-SWNTs call significantly enhance the semiconducting properties of SWNT networks which resulted in highly sensitive sensors.