Tunnel triode—a tunneling base transistor
Tunnel triode—a tunneling base transistor
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隧道三极管——隧道基极晶体管
DOI：
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发表时间：
1977
期刊：
影响因子：
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通讯作者：
L. Esaki
中科院分区：
文献类型：
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作者：
L. L. Chang;L. Esaki
提出了一种由半导体异质结制成的半导体结构，其中一种类型的载流子隧穿通过基极区，另一种类型的载流子被限制到基极区。In1−xGaxAs和GaSb1−yAsy合金是这种异质结构的候选材料。作为一款三端放大器，该器件的输入和输出阻抗都很高，电流增益很大，高频峰值也有显著改善。
Proposed is a triode structure made of semiconductor heterojunctions where carriers of one type tunnel through the base region to which carriers of the other type are confined. In1−xGaxAs and GaSb1−yAsy alloys are candidates for this heterostructure. As a three‐terminal amplifier, the device is expected to exhibit high impedances for both input and output, a large current gain, and a marked improvement in high‐frequency peformance.