Domain structure control of (001)∕(100)-oriented epitaxial Pb(Zr,Ti)O3 films grown on (100)cSrRuO3∕(100)SrTiO3 substrates
Domain structure control of (001)∕(100)-oriented epitaxial Pb(Zr,Ti)O3 films grown on (100)cSrRuO3∕(100)SrTiO3 substrates
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DOI：
10.1063/1.1938250
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发表时间：
2005-05
影响因子：
4
通讯作者：
Yong Kim;H. Morioka;R. Ueno;S. Yokoyama;H. Funakubo
中科院分区：
文献类型：
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作者：
Yong Kim;H. Morioka;R. Ueno;S. Yokoyama;H. Funakubo
采用金属有机化学气相沉积法在(100)cSrRuO_3/(100)SrTiO_3衬底上生长了(001)/(100)取向的四方外延Pb(Zr0.35，Ti0.65)O_3薄膜，系统地研究了薄膜的磁畴结构和电学性质。在保持其他工艺条件不变的情况下，通过改变生长温度从380℃到540℃，薄膜厚度从50到380 nm，系统地控制了具有不同体积分数的c-结构域的宽范围的结构。降低沉积温度和/或增加薄膜厚度减少了C-结构域的数量。A区占主导地位的薄膜的相对介电常数(≈5 0 0)(c轴取向磁区的体积分数，VC≈0.0 5)大于c区占主导地位的薄膜(VC≈1.0)的相对介电常数(≈30 0)。在c磁区，饱和极化和剩余极化与c磁区的体积分数成线性关系。在a域占主导地位的区域，它们显示出非常大的价值。
The domain structure and electrical properties were systematically investigated in (001)∕(100)-oriented tetragonal epitaxial Pb(Zr0.35,Ti0.65)O3 thin films grown on (100)cSrRuO3∕(100)SrTiO3 substrates by metalorganic chemical vapor deposition. The wide range of domain structures with various volume fractions of c-domains from 0.05 to 1.0 was systematically controlled by changing the growth temperature from 380to540°C and the film thickness from 50to380nm, while keeping the other processing conditions the same. Reducing the deposition temperature and∕or increasing the film thickness reduced the population of c-domains. The relative dielectric constant (≈500) of the a-domain dominant films (volume fraction of c-axis-oriented domains, VC≈0.05) was larger than that (≈300) of the c-domain dominant ones (VC≈1.0). In the c-domain dominant region, the saturation and remanent polarization changed linearly with the volume fraction of c-domains. In the a-domain dominant region, they showed extraordinary large values...