Current–voltage characteristics of GaAs/AlAs double‐barrier resonant tunneling diodes with a Si‐planar‐doped barrier
Current–voltage characteristics of GaAs/AlAs double‐barrier resonant tunneling diodes with a Si‐planar‐doped barrier
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DOI：
10.1063/1.360972
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发表时间：
1996-02
影响因子：
3.2
通讯作者：
H. Fukuyama;T. Waho;T. Mizutani
中科院分区：
文献类型：
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作者：
H. Fukuyama;T. Waho;T. Mizutani
研究了具有硅平面掺杂势垒的GaAs/AlAs双势垒谐振隧道二极管（rtd）的电流电压特性。在4.2 K时，当硅被引入到电子发射电极旁边的势垒（发射极势垒）时，峰谷电流比减小。另一方面，当Si被引入到另一个势垒，即电子流入的电极旁边（集电极势垒）时，该比率并没有显著降低。为了研究峰谷比减小的原因，我们通过实验计算了透射系数，发现双势垒rtd的共振透射宽度几乎相同。这意味着峰谷电流比的减小不是由共振传输宽度的扩大引起的。为了解释峰谷电流比降低的原因，我们引入了一个新的模型，其中过量电流流过发射极势垒中的供体电平。反对……
Current–Voltage (I–V) characteristics of GaAs/AlAs double‐barrier resonant tunneling diodes (RTDs) with a Si‐planar‐doped barrier are studied. At 4.2 K the peak‐to‐valley current ratio decreased when Si was introduced to the barrier next to the electrode from which electrons are emitted (emitter barrier). On the other hand, the ratio did not decrease considerably when Si was introduced to the other barrier, i.e., next to the electrode into which electrons flow (collector barrier). To investigate the origin of the decrease in the peak‐to‐valley ratio, we evaluated the transmission coefficient experimentally, and found that the resonance transmission widths for the double‐barrier RTDs are almost the same. This means that the reduction in the peak‐to‐valley current ratio is not caused by the broadening of resonance transmission width. To explain why the peak‐to‐valley current ratio is degraded, we then introduced a new model in which an excess current flows through donor levels in the emitter barrier. To con...