Structural, electrical and optical characteristics of SnO2:Sb thin films by ultrasonic spray pyrolysis
Structural, electrical and optical characteristics of SnO2:Sb thin films by ultrasonic spray pyrolysis
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DOI：
10.1016/j.tsf.2006.01.001
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发表时间：
2006-07-03
期刊：
影响因子：
2.1
通讯作者：
Park, Byung-Ok
中科院分区：
文献类型：
--
作者：
Lee, Seung-Yup;Park, Byung-Ok
采用超声波喷雾热解法制备锑掺杂氧化锡（SnO2:Sb）薄膜。研究了锑掺杂对氧化锡薄膜的结构、电学和光学性能的影响。二水合氯化锡(IT) (SnCl2-2H(2)O) 和氯化锑(III) (SbCl3) 用作基质和掺杂剂前体。 X射线衍射分析表明，未掺杂的SnO2薄膜具有择优(211)取向，但随着Sb掺杂浓度的增加，观察到择优(200)取向。扫描电子显微镜研究表明，随着 Sb 掺杂浓度的增加，未掺杂 SnO2 薄膜中观察到的多面体晶粒变得更圆且尺寸减小。 3 at.% Sb 掺杂薄膜的电阻率最低（约 8.4 x 10(-4) Omega(.)cm）。锑掺杂导致载流子浓度增加和霍尔迁移率降低。随着Sb掺杂浓度的增加，近红外区的透射率水平降低。 (c) 2006 Elsevier B.V. 保留所有权利。
Antimony-doped tin oxide (SnO2:Sb) thin films were fabricated by an ultrasonic spray pyrolysis method. The effect of antimony doping on the structural, electrical and optical properties of tin oxide thin films were investigated. Tin(IT) chloride dehydrate (SnCl2-2H(2)O) and antimony(III) chloride (SbCl3) were used as a host and a dopant precursor. X-ray diffraction analysis showed that the non-doped SnO2 thin film had a preferred (211) orientation, but as the Sb-doping concentration increased, a preferred (200) orientation was observed. Scanning electron microscopy studies indicated that the polyhedron-like grains observed for the non-doped SnO2 thin films became rounder and decreased in size with the Sb-doping concentration. The lowest resistivity (about 8.4 x 10(-4) Omega(.)cm) was obtained for the 3 at.% Sb-doped films. Antimony-doping led to an increase in the carrier concentration and a decrease in Hall mobility. The transmittance level in the near infrared region was lowered with the Sb-doping concentration. (c) 2006 Elsevier B.V. All rights reserved.