Electronic Structure of Bathocuproine on Metal Studied by Ultraviolet Photoemission Spectroscopy
Electronic Structure of Bathocuproine on Metal Studied by Ultraviolet Photoemission Spectroscopy
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DOI：
10.1143/jjap.46.2692
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发表时间：
2006-09
影响因子：
1.5
通讯作者：
S. Toyoshima;Kazuhisa Kuwabara;T. Sakurai;T. Taima;K. Saito;H. Kato;K. Akimoto
中科院分区：
文献类型：
--
作者：
S. Toyoshima;Kazuhisa Kuwabara;T. Sakurai;T. Taima;K. Saito;H. Kato;K. Akimoto
通过紫外光电子能谱（UPS）研究了浴铜灵（BCP）和金属之间界面的电子结构。对于 Ag、Al、Mg 和 Ca，在费米能级附近观察到界面态。另一方面，没有观察到 Au 的界面态。界面态的强度随着金属功函数的降低而增加。这表明界面态在界面电子传输中起着重要作用。结果发现，BCP真空能级和金属费米能级之间的能量差几乎恒定。这种现象类似于在金属/半导体界面处观察到的肖特基势垒钉扎。讨论了这种现象的原因。
The electronic structure at the interface between bathocuproine (BCP) and a metal was studied by ultraviolet photoemission spectroscopy (UPS). For Ag, Al, Mg, and Ca, interface states were observed near the Fermi level. On the other hand, no interface states were observed for Au. The intensities of the interface states increase with decreasing metal work function. It is suggested that the interface states play an important role in electron transport at the interface. It was found that the energy difference between the BCP vacuum level and the metal Fermi level is almost constant. This phenomenon is similar to the Schottky barrier pinning observed at a metal/semiconductor interface. The cause of this phenomenon is discussed.