A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing
A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing
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DOI：
10.1109/iedm.2014.7047158
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发表时间：
2014-12
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通讯作者：
Y. Lee;Ta-Chun Cho;K. Kao;P. Sung;F. Hsueh;P. Huang;C. Wu;Shu‐Han Hsu;W. Huang;H. Chen;Y. Li;M. Current;B. Hengstebeck;J. Marino;T. Buyuklimanli;J. Shieh;T. Chao;W. Wu;W. Yeh
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作者：
Y. Lee;Ta-Chun Cho;K. Kao;P. Sung;F. Hsueh;P. Huang;C. Wu;Shu‐Han Hsu;W. Huang;H. Chen;Y. Li;M. Current;B. Hengstebeck;J. Marino;T. Buyuklimanli;J. Shieh;T. Chao;W. Wu;W. Yeh
首次提出并研究了一种通过分子单层掺杂（MLD）方法和低温微波退火（MWA）形成的具有壳掺杂分布（SDP）的新型无结（JL）FinFET结构。根据模拟，由于超薄 SDP 导致了易于耗尽的沟道，因此所提出的 JLFinFET 可以在高掺杂水平下保持理想的亚阈值摆幅 (~ 60 mV/dec)。采用 MLD 和 MWA 处理的多晶硅 JLFinFET 对于 n 和 p 沟道器件均表现出卓越的亚阈值摆幅 (S.S. ~ 67mV/dec) 和出色的开关比 (>106)。 MLD-JLFinFET 中由于随机掺杂波动 (RDF) 导致的阈值电压 (VTH) 变化减少，这可归因于 Si 表面 MLD 的分子自限制特性和低温下的准扩散 MWA。我们的结果揭示了所提出的 SDP 的潜力，使 JLFET 在低功耗应用中表现出减少的变化和出色的性能。
For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (~ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ~ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (VTH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.