Integrated complementary graphene inverter
Integrated complementary graphene inverter
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DOI：
10.1063/1.3148342
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发表时间：
2009-06-01
影响因子：
4
通讯作者：
Sordan, Roman
中科院分区：
文献类型：
--
作者：
Traversi, Floriano;Russo, Valeria;Sordan, Roman
一个数字逻辑反相器的操作，包括一个p型和一个n型石墨烯晶体管集成在同一片单层石墨烯的演示。这两个晶体管最初在低栅极电压下表现出p型行为，因为空气污染将它们的狄拉克点从零移到正栅极电压。一个晶体管中的污染物通过电退火被去除，这将其狄拉克点移回，从而恢复了n型行为。通过在晶体管的狄拉克点之间操作晶体管来获得布尔反转。制造的逆变器代表了在石墨烯上开发数字集成电路的重要一步。
The operation of a digital logic inverter consisting of one p- and one n-type graphene transistor integrated on the same sheet of monolayer graphene is demonstrated. Both transistors initially exhibited p-type behavior at low gate voltages, since air contamination shifted their Dirac points from zero to a positive gate voltage. Contaminants in one transistor were removed by electrical annealing, which shifted its Dirac point back and therefore restored n-type behavior. Boolean inversion is obtained by operating the transistors between their Dirac points. The fabricated inverter represents an important step toward the development of digital integrated circuits on graphene.