Eu3+ DOPED SILICA FILM AS LUMINESCENT DOWN-SHIFTING LAYER FOR CRYSTALLINE Si SOLAR CELLS

Eu3+ DOPED SILICA FILM AS LUMINESCENT DOWN-SHIFTING LAYER FOR CRYSTALLINE Si SOLAR CELLS
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Eu3 掺杂二氧化硅薄膜作为晶体硅太阳能电池的发光下移层

DOI:
10.1142/s0218625x09013141
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发表时间:
2009
影响因子:
1.1
通讯作者:
Zhuo Sun
Zhuo Sun
中科院分区:
材料科学4区
文献类型:
--
作者:
Zujun Cheng;L. Pan;Fenfang Su;M. Cao;Zhuo Sun

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采用溶胶-凝胶法制备了Eu ~(3+)掺杂的SiO_2薄膜,并将其用作晶体硅太阳电池正面的发光下移层,以提高电池的转换效率。在标准测试条件(AM 1.5,100 mW/cm ~ 2)下的测试表明,与纯二氧化硅薄膜的硅太阳能电池相比,含Eu ~(3+)的二氧化硅薄膜的硅太阳能电池的转换效率最大提高了9.5%。然而,不鼓励高Eu 3+浓度,因为浓度猝灭效应将降低太阳能电池的效率。
Eu3+ doped silica films have been prepared by sol–gel method and employed as luminescent down-shifting layer on the front side of a crystalline Si solar cell to improve their conversion efficiency. Measurements under standard test conditions (AM1.5, 100 mW/cm2) show the conversion efficiency of Si solar cell with silica film containing Eu3+ is improved 9.5% maximally as compared to the Si solar cell with pure silica film. However, high Eu3+ concentration is not encouraged because concentration quenching effect will decrease the efficiency of the solar cell.