Electric Field Breakdown of Lateral Schottky Diodes of Diamond
Electric Field Breakdown of Lateral Schottky Diodes of Diamond
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DOI：
10.1143/jjap.46.l196
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发表时间：
2007-02
影响因子：
1.5
通讯作者：
T. Teraji;S. Koizumi;Y. Koide;T. Ito
中科院分区：
文献类型：
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作者：
T. Teraji;S. Koizumi;Y. Koide;T. Ito
分析了在同上钻石上制造的Al侧向Schottky二极管（100）膜的电流 - 电压特性。当最大电场在1.08–1.46范围内时，观察到热场发射机制。 MV/cm。击穿电场随着雪花板屏障的高度而增加。
Current–voltage characteristics of Al lateral Schottky diodes fabricated on homoepitaxial diamond (100) films were analyzed. The currents in reverse-bias voltages smaller and larger than 3 V were well explained by the image-force lowering mechanism modified by localized-field enhancement and the thermionic-field emission mechanism, respectively. An electric field breakdown was observed when the maximum electric field was in the range 1.08–1.46 MV/cm. The breakdown electric field became large with increasing the Schottky barrier height. These features suggest that the electric field breakdown occurred at the electrode fringe due to the field enhancement.