Electrical manipulation of spins in the Rashba two dimensional electron gas systems
Electrical manipulation of spins in the Rashba two dimensional electron gas systems
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DOI：
10.1063/1.3117232
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发表时间：
2009-06
影响因子：
3.2
通讯作者：
J. Nitta;T. Bergsten;Y. Kunihashi;M. Kohda
中科院分区：
文献类型：
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作者：
J. Nitta;T. Bergsten;Y. Kunihashi;M. Kohda
本文介绍了在半导体异质结中基于Rashba自旋-轨道相互作用(SOI)操纵电子自旋的理论和实验研究。通过分析弱反局域化效应，研究了InP/InGaAsInAlAs非对称量子阱中Rashba SOI强度α随厚度的变化。在相同的异质结中，两种不同的量子阱厚度表现出与|α|成反比的NS依赖性。用k-αp微扰理论解释了|⋅|的这种逆NS依赖性。我们证实了窄线对抑制自旋弛豫是有效的。在小阵列介观InGaAs环中实验研究了自旋进动引起的自旋干涉效应。这是时间反转Aharonov-Casher效应的实验证明，它表明InGaAs沟道中的自旋进动角可以由静电门控制。
We present our theoretical and experimental studies on manipulation of electron spins based on the Rashba spin-orbit interaction (SOI) in semiconductor heterostructures. Quantum well (QW) thickness dependence of the Rashba SOI strength α is investigated in InP/InGaAs/InAlAs asymmetric QWs by analyzing weak antilocalization. Two different QW thicknesses show inverse Ns dependence of |α| in the same heterostructures. This inverse Ns dependence of |α| is explained by the k⋅p perturbation theory. We confirm that narrow wires are effective to suppress the spin relaxation. Spin interference effects due to spin precession are experimentally studied in small array of mesoscopic InGaAs rings. This is an experimental demonstration of a time reversal Aharonov–Casher effect, which shows that the spin precession angle in an InGaAs channel can be controlled by an electrostatic gate.