Crystal structure, thermal expansion and electrical properties of a new compound HoAl0.34Ge2
Crystal structure, thermal expansion and electrical properties of a new compound HoAl0.34Ge2
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DOI：
10.1016/j.matchemphys.2008.07.008
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发表时间：
2008-12
影响因子：
4.6
通讯作者：
L. Zeng;Pingli Qin;Ye Chen;Hongrui Liu;Wei He;Liangqin Nong
中科院分区：
文献类型：
--
作者：
L. Zeng;Pingli Qin;Ye Chen;Hongrui Liu;Wei He;Liangqin Nong
本文合成了一种新的三元化合物HoAl_（0.34）Ge_（2-），并用X射线粉末衍射技术研究了它在298 ~ 773 K温度范围内的结构。用Rietveld方法测定了HoAl_（0.34）Ge_2的晶体结构。三元化合物HoAl 0.34 Ge 2以正交缺陷CeNiSi 2结构类型（空间群Cmcm，a=0.40905（1）nm，B=1.61575（5）nm，c=0.39395（1）nm，Z=4和Dcalc= 8.145 gcm −3）结晶。HoAl 0.34Ge 2的平均热膨胀系数α <$a、α <$band α <$c分别为1.89×10− 5 K −1、0.87×10− 5 K − 1和1.59×10− 5 K −1。平均体积热膨胀系数α维斯为4.25×10− 5 K −1。在5 ~ 300 K温度范围内测量了HoAl_（0.34）Ge_2的电阻率。在所研究的温度范围内，它表现出类似金属的导电行为。
A new ternary compound HoAl0.34Ge2has been synthesized and studied from 298K to 773K by means of X-ray powder diffraction technique. The crystal structure of HoAl0.34Ge2has been determined by using Rietveld method. The ternary compound HoAl0.34Ge2crystallizes in the orthorhombic defect CeNiSi2structure type (space group Cmcm, a=0.40905(1)nm, b=1.61575(5)nm, c=0.39395(1)nm, Z=4 and Dcalc=8.145gcm−3). The average thermal expansion coefficients α¯a, α¯band α¯cof HoAl0.34Ge2are 1.89×10−5K−1, 0.87×10−5K−1and 1.59×10−5K−1, respectively. The average coefficient of bulk thermal expansion α¯Vis 4.25×10−5K−1. Electrical resistivity of HoAl0.34Ge2was measured between 5K and 300K. It shows metallic-like behavior of conductivity in the investigated temperature range.